For first time artificial graphene is made to duplicate the electronic structure of graphene in a semiconductor device.
In the last few years, a new form of graphene has garnered increasing interest. Dubbed “artificial graphene,” this latest addition to the 2D landscape is not formed from a single atomic layer of graphite. Instead it is synthesized from other materials to have the same honeycomb lattice molecular structure as graphene, but modified to have specific electronic properties.
Now a team of researchers from Columbia University and colleagues from Princeton and Purdue Universities along with those from the Instituto Italiano di Tecnologia in Italy has taken the next step in artificial graphene by creating for the first time the electronic structure of graphene in a semiconductor device.
The international research team fabricated a solid-state gallium arsenide (GaAs) quantum well, which is a thin layer of material that confines particles such as electrons or holes in the dimension perpendicular to the layer surface. This solid-state semiconductor device marks a big departure from previous uses of artificial graphene that have been restricted to photonic devices.
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Source: IEEE Spectrum