A Step Towards Realizing Graphene-Based Semi-Conductor Chips


A Step Towards Realizing Graphene-Based Semi-Conductor Chips - Electronics Featured Graphene research

This image shows represents before and after the pulsed laser annealing of reduced Oxide (rGO). Using high-powered laser pulses at room temperature and normal atmospheric pressure, the pulses convert the positive (p-type) material into negative type (n-type) material. (credit: Anagh Bhaumik and Jagdish Narayan/Journal of Applied Physics)

Researchers from North Carolina State University have developed a layered material that can be used to develop transistors based on graphene — something the industry has been searching for for a long time. 

Graphene has extremely high conductivity, even moreso than copper. However, it’s not a semiconductor, therefore it can’t work in a transistor. A form of graphene called “graphene oxide” actually is a semiconductor, but it doesn’t share the conductive properties. 

Instead, there’s a form of graphene oxide called “reduced graphene oxide” (rGO) that does share the conductive properties. However it still can’t function as a transistor, since it can only function as a positively charged material. 

The researchers from NC State managed to find a solution, kurzweilai.net reports, “The NC State researchers’ solution was to use high-powered laser pulses to disrupt chemical groups on an rGO thin film. This disruption moved electrons from one group to another, effectively converting p-type rGO to n-type rGO. They then used the two forms of rGO as two layers (a layer of n-type rGO on the surface and a layer of p-type rGO underneath) — creating a layered thin-film material that could be used to develop rGO-based transistors for use in future semiconductor chips.”

The paper was published in the Journal of Applied Physics. The work was done with support from the National Science Foundation. 

Source: Kurzweilai.net

Publication Journal: Anagh Bhaumik and Jagdish Narayan. Conversion of p to n-type Reduced Graphene Oxide by Laser Annealing at Room Temperature and Pressure. March 29, Journal of Applied Physics; DOI: 10.1063/1.4979211