A Graphene And Boron Nitride Heterostructure Creates Large Spin Signals

A Graphene And Boron Nitride Heterostructure Creates Large Spin Signals - Electronics Featured Graphene
A layer-by-layer schematic alongside an optical microscopic picture of a and boron nitride heterostructure device which shows unprecedented spin transport efficiency at room temperature. Credit: Credit: M. Gurram, S. Omar and B.J. van Wees, University of Groningen.

Graphene Flagship scientists based at the University of Groningen, The Netherlands, have created a device based on a blilayer of graphene and boron nitride which shows unprecedented spin transport efficiency at room temperature. Highlighting the potential of creating devices containing graphene and related materials, the spin signal measured here is so large that it can be used in real-life applications such as spin based logic and transistors.

Published in Nature Communications, this , led by Professor Bart van Wees, University of Groningen, The Netherlands, reports a -based in which electron spins can be injected and detected at with high efficiency. The key is the interplay between the graphene and the boron nitride in the way that they conduct electron spins.

Spin can be thought of as the rotation of an electron around its own axis. It is a form of intrinsic angular momentum and can be detected as a magnetic field with one of two orientations: up and down. Electron spin is difficult to handle and often loses direction over time. To use in a device, is important—this is the ability to control the fraction of electrons with a spin up or down. “Spin polarization can be achieved by sending the electrons through a ferromagnetic material,” van Wees explains.

The full story is available below.

SourcePhys.org

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