A resistive random access memory (RRAM) has been synthesised using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures by researchers at the Lanza Laboratory located at Soochow University in China.
The research team claims the amount of 2D-materials-based commercial devices available in the market is ‘preoccupyingly’ low and analytical tools capable of describing and predicting the behaviour of the devices – which are necessary before facing mass production – are scarce.
To counter these issues, the team developed a RRAM device with graphene electrodes and hexagonal boron nitride dielectric. They used scalable methods, such as chemical vapour deposition for material growth and shadow mask for electrode patterning. The device is said to show reproducible resistive switching.
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